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    IRFY320 Search Results

    IRFY320 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY320 Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY320 Semelab N-Channel Power MOSFET for HI-REL Apps Scan PDF
    IRFY320C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY320SM Semelab Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications Scan PDF

    IRFY320 Datasheets Context Search

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    IRFY320

    Abstract: No abstract text available
    Text: IRFY320 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)


    Original     		PDF IRFY320 O257AB O257AB O220M) 13-Sep-02 IRFY320

    IRFY320C

    Abstract: No abstract text available
    Text: IRFY320C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 3.3A RDS(ON) = 1.8Ω Ω 1.0 (0.039)


    Original     		PDF IRFY320C O257AB O257AB O220M) 13-Sep-02 IRFY320C

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    IRFY320

    Abstract: LE17
    Text: bOE D • filBBlfi? DQQOSSb fiTfi ■ S f l L B SENELAB PLC ^ T ‘3 ^ - I V SEM ELAB IRFY320 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS r y FEATURES • HERMETIC T 0 2 2 0 METAL OR CERAMIC SURFACE M O U N T PACKAGES


    OCR Scan     		PDF IRFY320 T0220 T0220M T0220SM 00A//xs IRFY320 LE17

    lm3i7

    Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
    Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24


    OCR Scan     		PDF IN4001CSMU IN4003CSMD 60DCSM 222IA 2N2221DCSM 2N2222ADCSM 2N2222DCSM 2N2369ADCSM 2N2453D 2N2639DCSM lm3i7 BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M