IRG4C254SB Search Results

for IR IGBT die

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Text: PD - 95859 IRG4C254SB IRG4C254SB IGBT Die in Wafer Form l l C 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ 250V VCE on = 1.5V (max.) 6" Wafer G E Key Electrical Characteristics (TO-247 package) Parameter V(BR)CES VCE(ON) VGE(th)