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    Infineon Technologies AG IRG7PK35UD1PBF

    IGBT 1400V 40A TO-247AC
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    DigiKey IRG7PK35UD1PBF Tube
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    International Rectifier IRG7PK35UD1PBF

    Discrete IGBT with Anti-Parallel Diode
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    Rochester Electronics IRG7PK35UD1PBF 13 1
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    ComSIT USA IRG7PK35UD1PBF 150
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    IRG7PK35UD1PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PK35UD1PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1400V 40A 167W TO247AC Original PDF

    IRG7PK35UD1PBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


    Original     		IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


    Original     		IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ PDF