Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRGB4064DPBF Search Results

    SF Impression Pixel

    IRGB4064DPBF Price and Stock

    Infineon Technologies AG IRGB4064DPBF

    IGBT 600V 20A 101W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRGB4064DPBF Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    International Rectifier IRGB4064DPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IRGB4064DPBF 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRGB4064DPBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGB4064DPBF International Rectifier 600V UltraFast Copack Trench IGBT in a TO-220AB package; A IRGB4064DPBF with Standard Packaging Original PDF
    IRGB4064DPBF International Rectifier Original PDF

    IRGB4064DPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 10a 400v

    Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF O-220AB diode 10a 400v ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF

    IRF1010

    Abstract: ultrafast diode 10a 400v
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF IRF1010 O-220AB IRF1010 ultrafast diode 10a 400v

    Untitled

    Abstract: No abstract text available
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF IRGB4064DPbF O-220AB

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor