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    IRGB6B60K Price and Stock

    Infineon Technologies AG IRGB6B60KPBF

    IGBT 600V 13A 90W TO220AB
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    DigiKey IRGB6B60KPBF Tube
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    RS IRGB6B60KPBF Bulk 5
    • 1 -
    • 10 $1.6
    • 100 $1.6
    • 1000 $1.6
    • 10000 $1.6
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    Rochester Electronics IRGB6B60KPBF 147 1
    • 1 $0.7778
    • 10 $0.7778
    • 100 $0.7311
    • 1000 $0.6611
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    Infineon Technologies AG IRGB6B60KDPBF

    IGBT 600V 13A 90W TO220AB
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    DigiKey IRGB6B60KDPBF Tube
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    RS IRGB6B60KDPBF Bulk 400
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    International Rectifier IRGB6B60KPBF

    IRGB6B60 - Discrete IGBT without Anti-Parallel Diode '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRGB6B60KPBF 50 1
    • 1 $0.7778
    • 10 $0.7778
    • 100 $0.7311
    • 1000 $0.6611
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    ComSIT USA IRGB6B60KPBF 400
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    International Rectifier IRGB6B60KDPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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    ComSIT USA IRGB6B60KDPBF 580
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    IRGB6B60K Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGB6B60K International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-220AB package; A IRGB6B60K with Standard Packaging Original PDF
    IRGB6B60K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRGB6B60K International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-220AB package Original PDF
    IRGB6B60K International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-220AB package Original PDF
    IRGB6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package Original PDF
    IRGB6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package Original PDF
    IRGB6B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging Original PDF
    IRGB6B60KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRGB6B60KDPBF International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; Similar to IRGB6B60KD with Lead Free Packaging Original PDF
    IRGB6B60KDPBF International Rectifier Original PDF
    IRGB6B60KPBF International Rectifier 600V UltraFast 10-30 kHz IGBT in a TO-220AB package; Similar to IRGB6B60K with Lead Free Packaging Original PDF
    IRGB6B60KPBF International Rectifier Original PDF

    IRGB6B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12Q

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 A12Q

    irg 250

    Abstract: C-150 IRF1010 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K IRL3103L transistor* igbt 70A 300 V
    Text: PD - 94575 IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 O-220AB AN-994. irg 250 C-150 IRF1010 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K IRL3103L transistor* igbt 70A 300 V

    Untitled

    Abstract: No abstract text available
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K AN-994.

    IRGB6B60KDPBF

    Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
    Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB IRGB6B60KD O-262 IRGS6B60KD IRGSL6B60KD AN-994. IRGB6B60KDPBF AN-994 C-150 IRF530S IRGB6B60KD IRGSL6B60KD IRF53

    TRANSISTOR marking ar code

    Abstract: AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K O-220AB TRANSISTOR marking ar code AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    400v 50A Transistor

    Abstract: C-150 IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K IRGB/S/SL6B60KPbF 400v 50A Transistor C-150 IRGB6B60K IRGS6B60K IRGSL6B60K

    AN-994

    Abstract: C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD
    Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 5229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB IRGB6B60KD O-262 IRGS6B60KD IRGSL6B60KD AN-994. AN-994 C-150 IRF530S IRGB6B60KD IRGSL6B60KD

    C-150

    Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V

    irg 250

    Abstract: IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 Continuo-10 irg 250 IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229C IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262

    IRF 1640 G

    Abstract: IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor
    Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-220 AN-994. IRF 1640 G IRF 1630 47W surface mount transistor IRF 1640 NAT 3 transistor

    irgb60

    Abstract: No abstract text available
    Text: PD - 95644 IRGB6B60KPbF IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB6B60KPbF IRGS6B60K IRGSL6B60K O-220AB IRGS6B60K O-262 irgb60

    AN-994

    Abstract: C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K Collector-to-Em-10 AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L
    Text: PD - 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262 IRGB6B60KDPbF IRGS6B60KDPbF O-220AB

    IRF530S

    Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150

    C-150

    Abstract: IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 O-220AB C-150 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF O-220AB O-262

    AN-994

    Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
    Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD O-220 O-220AB O-262 IRGB6B60KDPbF IRGS6B60KD AN-994. AN-994 C-150 IRF530S IRGSL6B60KD

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter