IRGCC40KE
Abstract: IRGPC40K
Text: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
IRGPC40K
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IRGCC40KE
Abstract: IRGPC40K
Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
IRGPC40K
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IRGCC40KE
Abstract: IRGPC40K for IR IGBT die
Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCC40KE
IRGCC40KE
IRGPC40K
for IR IGBT die
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage
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OCR Scan
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P-947
IRGCC40KE
IRGCC40KE
250pA,
250pA
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