igbt 20A 1200v
Abstract: IRGCH50ME IRGPH50M
Text: PD-9.1420 TARGET IRGCH50ME IRGCH50ME IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCH50ME
IRGCH50ME
IRGPH50M
igbt 20A 1200v
IRGPH50M
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IRGCH50ME
Abstract: IRGPH50M
Text: Previous Datasheet Index Next Data Sheet PD-9.1420 TARGET IRGCH50ME IRGCH50ME IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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Original
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PDF
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IRGCH50ME
IRGCH50ME
NorminalH50M
IRGPH50M
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Untitled
Abstract: No abstract text available
Text: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage
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OCR Scan
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IRGCH50ME
250pA,
250pA
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