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    IRGS4B60K Search Results

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    IRGS4B60K Price and Stock

    Rochester Electronics LLC IRGS4B60KD1TRRP

    IGBT 11A, 600V, N CHANNEL
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    DigiKey IRGS4B60KD1TRRP Bulk 259 259
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    Infineon Technologies AG IRGS4B60KPBF

    IGBT 600V D2PAK-3
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    Infineon Technologies AG IRGS4B60KD1PBF

    IGBT 600V 11A 63W D2PAK
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    Rochester Electronics IRGS4B60KD1PBF 50 1
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    Infineon Technologies AG IRGS4B60KD1TRLP

    IGBT 600V 11A 63W D2PAK
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    IRGS4B60KD1TRLP Digi-Reel 1
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    Infineon Technologies AG IRGS4B60KD1TRRP

    IGBT 600V 11A 63W D2PAK
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    Rochester Electronics IRGS4B60KD1TRRP 1,313 1
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    Find more IRGS4B60K price and stock on Findchips.com

    IRGS4B60K Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGS4B60K International Rectifier 600V Low VCEon Copack IGBT in a D2Pak package Original PDF
    IRGS4B60K International Rectifier 600V Low VCEon Copack IGBT in a D2Pak package; A IRGS4B60K with Standard Packaging Original PDF
    IRGS4B60KD1 International Rectifier 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging Original PDF
    IRGS4B60KD1 International Rectifier 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package Original PDF
    IRGS4B60KD1PBF International Rectifier 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; Similar to IRGS4B60KD1 with Lead Free Packaging Original PDF
    IRGS4B60KD1PBF International Rectifier Original PDF
    IRGS4B60KD1TRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 11A 63W D2PAK Original PDF
    IRGS4B60KD1TRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 11A 63W D2PAK Original PDF
    IRGS4B60KPBF International Rectifier 600V Low VCEon Copack IGBT in a D2Pak package; Similar to IRGS4B60K with Lead Free Packaging Original PDF
    IRGS4B60KPBF International Rectifier Original PDF

    IRGS4B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.

    C-150

    Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 O-220AB. C-150 IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V

    SL4B

    Abstract: FD059
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 IRGB4B60KPbF O-262 AN-994. SL4B FD059

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    igbt 500V 22A

    Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. igbt 500V 22A C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B

    AN-994

    Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60K IRGS4B60K IRGSL4B60K O-220 IRGB4B60K IRGS4B60K O-262 AN-994. FD059H06A5.

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K
    Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF 4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994. C-150 IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4607A IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994.

    C-150

    Abstract: IRGS4B60K IRGSL4B60K
    Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF IRGB4B60KPbF IRGS4B60K IRGSL4B60K O-220 O-220 IRGB4B60KPbF O-262 AN-994. C-150 IRGS4B60K IRGSL4B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. FD059H06A5. C-150 IRF1010 IRF530S IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.


    Original     		PDF 4633A IRGB4B60K IRGS4B60K IRGSL4B60K O-220 O-262 AN-994.

    AN-994

    Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    AN-994

    Abstract: C-150 igbt 400V 40A
    Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF O-220 O-262 IRGS4B60KPbF AN-994. AN-994 C-150 igbt 400V 40A

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRFP460Z

    Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
    Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB


    Original     		PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205