p-chan 10a
Abstract: IRH9130 IRH93130 aval
Text: PD - 90880A IRH9130 IRH93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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0880A
IRH9130
IRH93130
p-chan 10a
IRH9130
IRH93130
aval
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Untitled
Abstract: No abstract text available
Text: PD - 90880C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA IRH9130 100V, P-CHANNEL RADHard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
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90880C
T0-204AA)
IRH9130
IRH93130
-480A/Â
-100V,
MIL-STD-750,
MlL-STD-750,
O-204AA
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IRH9130
Abstract: IRH93130
Text: PD - 90880B RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA IRH9130 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
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90880B
T0-204AA)
IRH9130
IRH93130
-480A/
-100V,
MIL-STD-750,
MlL-STD-750,
O-204AA
IRH9130
IRH93130
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IRH9130
Abstract: IRH93130
Text: PD - 90880C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA IRH9130 100V, P-CHANNEL RADHard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
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90880C
T0-204AA)
IRH9130
IRH93130
-480A/
-100V,
MIL-STD-750,
MlL-STD-750,
O-204AA
IRH9130
IRH93130
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.880 INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE AND dv/dt RATED IRH9130 HEXFET TRANSISTORS RAD HARD -100 Volt, 0.300, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRH9130
1x105
MIL-STD-750,
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IRH9130
Abstract: 1105U
Text: Data Sheet No. PD-9.880 INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS y IRHS130 P-CHANNEL RAD HARD -100 Volt, 0.30®, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHS130
1x105
1x1012
MIL-STD-750,
IRH9130
1105U
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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mc 9880
Abstract: No abstract text available
Text: Data Sheet No. PD-9.880 INTERNATIONAL RECTIFIER I 3 R REPETITIVE AVALANCHE AND dv/dt RATED IRHS130 HEXFET TRANSISTORS RAD HARD Product Summary -100 Volt, 0.30fi, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHS130
1x105
1x105
1x1012s
MIL-STD-750,
15Q0C
mc 9880
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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SHOCK+SENSOR+083
Abstract: No abstract text available
Text: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83
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IRH7054
IRH8054
IRH7130
IRH8130
IRH7150
IRH8150
IRH7230
IRH8230
IRH7250
IRH8250
SHOCK+SENSOR+083
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