hexing test
Abstract: IRHN7150 IRHN8150
Text: Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.055Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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IRHN7150
IRHN8150
hexing test
IRHN7150
IRHN8150
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IRHN7150
Abstract: IRHN8150
Text: PD - 90720B REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 100Volt, 0.065Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90720B
IRHN7150
IRHN8150
100Volt,
1x106
IRHN7150
IRHN8150
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IRHN7150
Abstract: IRHN8150
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 100 Volt, 0.055Ω International Rectifier’s MEGA RAD HARD technology
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IRHN7150
IRHN8150
IRHN7150
IRHN8150
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Untitled
Abstract: No abstract text available
Text: PD - 90720D IRHN7150 JANSR2N7268U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHN7150 100K Rads (Si) 0.065Ω IRHN3150 300K Rads (Si) 0.065Ω
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90720D
IRHN7150
JANSR2N7268U
MIL-PRF-19500/603
IRHN3150
IRHN4150
JANSF2N7268U
JANSG2N7268U
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IRHN3150
Abstract: IRHN4150 IRHN7150 IRHN8150 JANSR2N7268U
Text: PD - 90720E IRHN7150 JANSR2N7268U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHN7150 100K Rads (Si) 0.065Ω IRHN3150 300K Rads (Si) 0.065Ω
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90720E
IRHN7150
JANSR2N7268U
MIL-PRF-19500/603
IRHN3150
IRHN4150
JANSF2N7268U
JANSG2N7268U
IRHN3150
IRHN4150
IRHN7150
IRHN8150
JANSR2N7268U
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHN3150
Abstract: IRHN4150 IRHN7150 IRHN8150 JANSR2N7268U
Text: PD - 90720C IRHN7150 JANSR2N7268U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω
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90720C
IRHN7150
JANSR2N7268U
MIL-PRF-19500/603
IRHN3150
IRHN4150
JANSF2N7268U
JANSG2N7268U
IRHN3150
IRHN4150
IRHN7150
IRHN8150
JANSR2N7268U
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Untitled
Abstract: No abstract text available
Text: PD - 90720E IRHN7150 JANSR2N7268U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHN7150 100K Rads (Si) 0.065Ω IRHN3150 300K Rads (Si) 0.065Ω
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90720E
IRHN7150
JANSR2N7268U
MIL-PRF-19500/603
IRHN3150
IRHN4150
JANSF2N7268U
JANSG2N7268U
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology
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OCR Scan
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IRHN7150
IRHN8150
Q0B5004
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IRHC7110
Abstract: IRHC7130 IRHC7150 D47 MOSFET
Text: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250
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IRHN7150
IRHN8150
IRHN7250
IRHN8250
IRHN7450
IRHN8450
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHC7110
IRHC7130
IRHC7150
D47 MOSFET
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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OCR Scan
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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H295
Abstract: H-294 H292
Text: Data Sheet No. PD-9.720A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS Or IRHN715Q IRHN815Q N-CHANNEL MEGA RAD HARD 100 Volt, 0.055Q, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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OCR Scan
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IRHN715Q
IRHN815Q
1x105
1x106
H-297
IRHN7150,
IRHN8150
H-298
H295
H-294
H292
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IRHE7110
Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0
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OCR Scan
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4flss452
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN80S4
IRHN7130
1RHF8130
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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OCR Scan
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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