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    IRHN9130 Search Results

    IRHN9130 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHN9130 International Rectifier -100 Volt, 0.30 Ohm, RAD HARD HEXFET TRANSISTOR Original PDF
    IRHN9130 International Rectifier RADIATION HARDENED POWER MOSFET Original PDF
    IRHN9130 International Rectifier -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package Original PDF
    IRHN9130 International Rectifier REPETITIVE AVALANCHE AND dv-dt RATED HEXFET TRANSISTOR Original PDF
    IRHN9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRHN9130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 90886B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω ID -11A 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90886B IRHN9130 IRHN93130 MIL-STD-750, MlL-STD-750, -480A/ -100V,

    100V Single P-Channel HEXFET MOSFET

    Abstract: IRHN9130
    Text: Provisional Data Sheet No. PD-9.886 IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.30Ω International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold


    Original
    PDF IRHN9130 100V Single P-Channel HEXFET MOSFET IRHN9130

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: pcb 480a charge amplifier IRHN9130 IRHN93130
    Text: PD - 90886A IRHN9130 IRHN93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original
    PDF 0886A IRHN9130 IRHN93130 IRF P CHANNEL MOSFET 10A 100V pcb 480a charge amplifier IRHN9130 IRHN93130

    IRHN9130

    Abstract: IRHN93130
    Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90886C IRHN9130 IRHN93130 -480A/ -100V, MIL-STD-750, MlL-STD-750, IRHN9130 IRHN93130

    Untitled

    Abstract: No abstract text available
    Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90886C IRHN9130 IRHN93130 -480A/Â -100V, MIL-STD-750, MlL-STD-750,

    IRHN9130

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.30Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold


    Original
    PDF IRHN9130 IRHN9130

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original
    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original
    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original
    PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original
    PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    Untitled

    Abstract: No abstract text available
    Text: Into f nQ t iO nQ I I R Rectifier Provisional Data Sheet No. PD-9.886A IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Sum m ary -100Volt,0.30Q, RAD HARD H EX FET International Rectifier’s P-channel RA D H A RD tech­


    OCR Scan
    PDF IRHN9130 -100Volt

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    JANSR2N7261

    Abstract: No abstract text available
    Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 JANSR2N7261

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHE9230 IRHN7054 IRHN8054

    H336

    Abstract: h337 Rad Hard in MOSFET
    Text: Data Sheet No. PD-9.886 INTERNATIONAL RECTIFIER I R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN913Q RAD HARD Product Summary -100 Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan
    PDF IRHN913Q 1x105 1x1012 MIL-STD-750, H-338 H336 h337 Rad Hard in MOSFET