IS45S16800E
Abstract: 2MX16X4 IS45S16800E-7CTNA1 is45s16800e-7tla2 IS45S16800E-6BLA
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 DECEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
IS45S16800E
2MX16X4
IS45S16800E-7CTNA1
is45s16800e-7tla2
IS45S16800E-6BLA
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 NOVEMBER 2010 128Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
IS45S81600E,
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION JUNE 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
IS45S81600E,
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION APRIL 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
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is45s16800e-7tla2
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION MAY 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
IS45S81600E,
is45s16800e-7tla2
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IS45S16800E
Abstract: 2MX16X4
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 FEBRUARY 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
IS45S16800E
2MX16X4
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 OCTOBER 2011 128Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
IS45S81600E,
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IS45S81600E
Abstract: IS45S16800E IS45S16800E-7CTLA1
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 DECEMBER 2011 128Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
IS45S81600E
IS45S16800E-7CTNA2
54-pin
IS45S16800E-7BLA2
54-ball
IS45S81600E,
IS45S16800E
IS45S16800E-7CTLA1
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is25c64B
Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital
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Untitled
Abstract: No abstract text available
Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clockfrequency:133,125MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge APRIL 2010 OVERVIEW
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IS42/45R81600E
IS42/45R16800E
128Mb
128Mbà
IS42/45R81600Eà
IS42/45R16800Eà
IS45R16800E-75BLA2à
IS45R16800E-8BLA2à
54-ballà
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Automotive Product Selector Guide
Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from
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2MX16x4
Abstract: No abstract text available
Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 PRELIMINARY INFORMATION MAY 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42/45R81600E
IS42/45R16800E
128Mb
54-ball
IS45R16800E-75BLA2
IS45R16800E-8BLA2
IS42/45R81600E,
2MX16x4
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45R16800E
Abstract: IS45R16800E-75BLA2 IS45S16800E 2MX16X4
Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 APRIL 2010 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS42/45R81600E
IS42/45R16800E
128Mb
IS42/45R81600E
54-pin
54-ball
45R16800E
IS45R16800E-75BLA2
IS45S16800E
2MX16X4
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45VS16800E
Abstract: 2MX16X4
Text: IS42/45VS81600E IS42/45VS16800E 16M x 8, 8M x16 ADVANCED INFORMATION SEPTEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42/45VS81600E
IS42/45VS16800E
128Mb
IS42/45VS81600E
54-pin
54-ball
45VS16800E
2MX16X4
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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