IS66WVD4M16ALL
Abstract: CellularRAM 66WVD4M16ALL
Text: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD4M16ALL
IS66WVD4M16ALL
64Mbit
-40oC
4Mx16
IS66WVD4M16ALL-7010BLI
IS66WVD4M16ALL-7008BLI
54-ball
CellularRAM
66WVD4M16ALL
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Untitled
Abstract: No abstract text available
Text: IS66WVD4M16ALL Advanced Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a
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Original
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PDF
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IS66WVD4M16ALL
IS66WVD4M16ALL
64Mbit
-40oC
4Mx16
IS66WVD4M16ALL-7013BLI
IS66WVD4M16ALL-7010BLI
IS66WVD4M16ALL-7008BLI
54-ball
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Untitled
Abstract: No abstract text available
Text: IS66WVD4M16ALL Preliminary Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a
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Original
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PDF
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IS66WVD4M16ALL
IS66WVD4M16ALL
64Mbit
-40oC
4Mx16
IS66WVD4M16ALL-7013BLI
IS66WVD4M16ALL-7010BLI
IS66WVD4M16ALL-7008BLI
54-ball
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Untitled
Abstract: No abstract text available
Text: I S66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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Original
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PDF
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S66WVD4M16ALL
IS66WVD4M16ALL
64Mbit
4Mx16
IS66WVD4M16ALL-7010BLI
54-ball
IS66WVD4M16ALL-7008BLI
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is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital
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Automotive Product Selector Guide
Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from
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16M X 32 SDR SDRAM
Abstract: IS42VM16400K is66wve2m16 IS42SM16100G is66wvc4m16 ISSI IS42S16400j IS66WVC4M16ALL CRAM 256mb IS42RM16800G
Text: Known Good Die KGD /Wafer Level Memories Introduction Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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