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    Abstract: No abstract text available
    Text: M ITEL ITZ35C12 Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a


    OCR Scan     		PDF ITZ35C12 DS5073 ITZ35C12

    ITZ35C12

    Abstract: No abstract text available
    Text: ITZ35C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a


    OCR Scan     		PDF ITZ35C12 DS5073 ITZ35C12