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    IW4023B Search Results

    IW4023B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IW4023BD IK Semicon Triple 3-Input NAND Gate Original PDF
    IW4023BD Integral Triple 3-input NAND gate, high-voltage silicon-gate CMOS Original PDF
    IW4023BN IK Semicon Triple 3-Input NAND Gate Original PDF
    IW4023BN Integral Triple 3-input NAND gate, high-voltage silicon-gate CMOS Original PDF

    IW4023B Datasheets Context Search

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    IW4023BN

    Abstract: IW4023BD
    Text: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full packagetemperature range; 100 nA at 18 V and 25°C


    Original
    PDF IW4023B IW4023B IW4023BN IW4023BD

    IW4023BN

    Abstract: IW4023BD
    Text: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 A at 18 V over full package-temperature


    Original
    PDF IW4023B IW4023B IW4023BN IW4023BD 012AB)

    IW4023BN

    Abstract: IW4023BD
    Text: TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature


    Original
    PDF IW4023B IW4023B IW4023BN IW4023BD 012AB)

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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