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IXAN0040

Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
Text: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power