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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	IXBF22N300 100ms 22N300 3-10-14-A	PDF

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Untitled

Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Original

IXBF22N300 100ms 22N300 3-10-14-A

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