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    IXBR42N170 Search Results

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    IXBR42N170 Price and Stock

    IXYS Corporation IXBR42N170

    IGBT 1700V 57A 200W ISOPLUS247
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    IXBR42N170 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXBR42N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 57A 200W ISOPLUS247 Original PDF

    IXBR42N170 Datasheets Context Search

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    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBR42N170 VCES = 1700V IC90 = 32A VCE sat ≤ 2.9V ISOPLUS247TM E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBR42N170 ISOPLUS247TM E153432 27ights 42N170

    DIODE 84A

    Abstract: IXBR42N170 ISOPLUS247 transistor 42A B42n
    Text: Preliminary Technical Information IXBR42N170 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 32A VCE sat ≤ 2.9V ISOPLUS247TM E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBR42N170 ISOPLUS247TM E153432 42N170 DIODE 84A IXBR42N170 ISOPLUS247 transistor 42A B42n