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    IXBT20N300 Search Results

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    IXBT20N300 Price and Stock

    IXYS Corporation IXBT20N300

    IGBT 3000V 50A TO268AA
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    DigiKey IXBT20N300 Tube
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    IXYS Corporation IXBT20N300HV

    IGBT 3000V 50A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT20N300HV Tube 30
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    • 100 $22.625
    • 1000 $22.625
    • 10000 $22.625
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    IXBT20N300 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBT20N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 50A 250W TO268 Original PDF
    IXBT20N300HV IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 50A 250W TO268 Original PDF

    IXBT20N300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


    Original     		PDF IC110 IXBH20N300 IXBT20N300 O-247 20N300

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT20N300HV IC110 O-268 20N300

    IXBH20N300

    Abstract: 20N30 B20N30
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


    Original     		PDF IXBH20N300 IXBT20N300 IC110 O-247 20N300 IXBH20N300 20N30 B20N30

    20A400

    Abstract: IXBH20N300 IXBT20N300
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBH20N300 IXBT20N300 IC110 O-268 IC110 O-247 20N300 20A400 IXBT20N300

    B20N30

    Abstract: IXBT20N300HV 20N30
    Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBT20N300HV IC110 IC110 O-268 20N300 B20N30 IXBT20N300HV 20N30

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250