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IXYS Corporation IXBX55N300 IGBT 3000V 130A 625W PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBX55N300	Tube			300	1 - 10 - 100 - 1000 $83.032 10000 $83.032	Buy Now
Mouser Electronics	IXBX55N300		300			1 $103.97 10 $94.93 100 $85.07 1000 $85.07 10000 $85.07	Buy Now

IXBX55N300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBX55N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 130A 625W PLUS247		Original	PDF

IXBX55N300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXBK55N300 Abstract: IXBX 55N300 IXBX55N300 Text: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXBK55N300 IXBX55N300 IC110 O-264 IC110 PLUS247 100ms IXBX 55N300 IXBX55N300
Untitled Abstract: No abstract text available Text: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK55N300 IXBX55N300 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXBK55N300 IXBX55N300 O-264 100ms 55N300
IXBK55N300 Abstract: IXBX55N300 55n30 transistor TO-264 Outline Dimensions IXBX 55N300 b55n3 PLUS247 Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBK55N300 IXBX55N300 VCES IC110 VCE sat Monolithic Bipolar MOS Transistor = 3000V = 55A ≤ 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXBK55N300 IXBX55N300 IC110 O-264 55N300 IXBK55N300 IXBX55N300 55n30 transistor TO-264 Outline Dimensions IXBX 55N300 b55n3 PLUS247
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	PDF	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250