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    IXBX64N250 Price and Stock

    IXYS Corporation IXBX64N250

    IGBT 2500V
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    DigiKey IXBX64N250 Tube 300
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    Mouser Electronics IXBX64N250
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    • 1000 $144.43
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    Future Electronics IXBX64N250 Tube 300
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    • 100 $126.14
    • 1000 $126.14
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    TTI IXBX64N250 Tube 300
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    • 1000 $171.61
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    New Advantage Corporation IXBX64N250 23 1
    • 1 $297.08
    • 10 $297.08
    • 100 $277.28
    • 1000 $277.28
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    Littelfuse Inc IXBX64N250

    Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tube |Littelfuse IXBX64N250
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    Newark IXBX64N250 Bulk 300
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    • 100 $134.89
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    RS IXBX64N250 Bulk 8 Weeks 30
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    • 100 $199.07
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    IXYS Integrated Circuits Division IXBX64N250

    IGBT DIS.DIODE SINGLE 64A 2500V BIMOSFET PLUS247
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    Ozdisan Elektronik IXBX64N250 29
    • 1 $218.37134
    • 10 $218.37134
    • 100 $207.9727
    • 1000 $207.9727
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    IXBX64N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBX64N250 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 2500V Original PDF

    IXBX64N250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXBX64N250

    Abstract: IC100 IXBK64N250 PLUS247
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247 PDF

    IXBX64N250

    Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a
    Text: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500


    Original     		IXBK64N250 IXBX64N250 O-264 IC110 PLUS247TM 64N250 IXBX64N250 IXBK64N250 64N250 IXBX 64N250 PLUS247 128a PDF

    64n250

    Abstract: No abstract text available
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 8-12-11B PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXBK64N250 IXBX64N250 O-264 IC100 64N250 8-12-11B PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 PDF