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    IXFB300N10P Search Results

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    IXFB300N10P Price and Stock

    Littelfuse Inc IXFB300N10P

    MOSFET N-CH 100V 300A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB300N10P Tube 132 1
    • 1 $22.02
    • 10 $22.02
    • 100 $22.02
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    Newark IXFB300N10P Bulk 300
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    • 1000 $23.08
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    RS IXFB300N10P Bulk 8 Weeks 25
    • 1 -
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    • 100 $34.05
    • 1000 $34.05
    • 10000 $34.05
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    IXYS Corporation IXFB300N10P

    MOSFETs POLAR PWR MOSFET 100V, 300A
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    Mouser Electronics IXFB300N10P
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    • 1000 $22.02
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    Future Electronics IXFB300N10P Tube 25
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    • 100 $21.76
    • 1000 $21.58
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    TTI IXFB300N10P Tube 300
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    • 1000 $22.02
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    TME IXFB300N10P 1 1
    • 1 $33.46
    • 10 $29.51
    • 100 $26.5
    • 1000 $26.5
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    New Advantage Corporation IXFB300N10P 20 1
    • 1 -
    • 10 $49.08
    • 100 $45.81
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    IXFB300N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB300N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 300A PLUS264 Original PDF

    IXFB300N10P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    IXFB300N10P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB300N10P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P IXFB300N10P PDF