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    IXFK250N10P Search Results

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    IXFK250N10P Price and Stock

    Littelfuse Inc IXFK250N10P

    MOSFET N-CH 100V 250A TO264AA
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    DigiKey IXFK250N10P Tube 26 1
    • 1 $22.39
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    Newark IXFK250N10P Bulk 300
    • 1 -
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    • 1000 $15.86
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    IXYS Corporation IXFK250N10P

    MOSFETs Polar Power MOSFET HiPerFET
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    Mouser Electronics IXFK250N10P 250
    • 1 $24.34
    • 10 $23.97
    • 100 $16.37
    • 1000 $15.13
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    Future Electronics IXFK250N10P Tube 44 Weeks 300
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    • 100 $17.62
    • 1000 $17.39
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    TTI IXFK250N10P Tube 300
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    • 1000 $15.35
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    TME IXFK250N10P 15 1
    • 1 $24.37
    • 10 $19.3
    • 100 $18.19
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    Chip 1 Exchange IXFK250N10P 1,982
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    New Advantage Corporation IXFK250N10P 1,225 1
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    • 100 $32.76
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    IXFK250N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK250N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-264 Original PDF

    IXFK250N10P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFK250N10P IXFX250N10P TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		PDF IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P

    IXFK

    Abstract: IXFK250N10P IXFX250N10P PLUS247
    Text: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK250N10P IXFX250N10P O-264 100ms 250N10P IXFK IXFK250N10P IXFX250N10P PLUS247

    IXFK250N10P

    Abstract: IXFX250N10P PLUS247 3jpd
    Text: IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		PDF IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P IXFK250N10P IXFX250N10P PLUS247 3jpd