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    IXYS Corporation IXFK250N10P

    MOSFETs Polar Power MOSFET HiPerFET
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    Mouser Electronics IXFK250N10P 140
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    Verical IXFK250N10P 15 3
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    Future Electronics IXFK250N10P Tube 26 Weeks 25
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    New Advantage Corporation IXFK250N10P 174 1
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    Littelfuse Inc IXFK250N10P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK250N10P
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    Newark IXFK250N10P Bulk 300
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    IXFK250N10P Datasheets (1)

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    IXFK250N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-264 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFK250N10P IXFX250N10P TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P PDF

    IXFK

    Abstract: IXFK250N10P IXFX250N10P PLUS247
    Text: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings


    Original     		IXFK250N10P IXFX250N10P O-264 100ms 250N10P IXFK IXFK250N10P IXFX250N10P PLUS247 PDF

    IXFK250N10P

    Abstract: IXFX250N10P PLUS247 3jpd
    Text: IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)


    Original     		IXFK250N10P IXFX250N10P 200ns O-264 100ms 250N10P IXFK250N10P IXFX250N10P PLUS247 3jpd PDF