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    IXFN26N120P Search Results

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    IXFN26N120P Price and Stock

    Littelfuse Inc IXFN26N120P

    MOSFET N-CH 1200V 23A SOT-227B
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    DigiKey IXFN26N120P Tube 300
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    Newark IXFN26N120P Bulk 300
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    RS IXFN26N120P Bulk 8 Weeks 10
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    IXYS Corporation IXFN26N120P

    Discrete Semiconductor Modules 26 Amps 1200V
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    Mouser Electronics IXFN26N120P
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    Future Electronics IXFN26N120P Tube 26 Weeks 10
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    TTI IXFN26N120P Tube 300
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    TME IXFN26N120P 7 1
    • 1 $66.31
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    New Advantage Corporation IXFN26N120P 15 1
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    IXFN26N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN26N120P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 23A SOT-227B Original PDF

    IXFN26N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26N120P

    Abstract: 26n120 IXFN26N120P
    Text: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFN26N120P 300ns OT-227 E153432 26N120P 3-28-08-B 26n120 IXFN26N120P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFN26N120P 300ns E153432 26N120P 10-24-11-C

    Untitled

    Abstract: No abstract text available
    Text: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFN26N120P E153432 300ns 26N120P 10-24-11-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN26N120P 300ns OT-227 E153432 26N120P 1-07-A

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P