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    IXFN38N100P Search Results

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    IXFN38N100P Price and Stock

    Littelfuse Inc IXFN38N100P

    MOSFET N-CH 1000V 38A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN38N100P Tube 224 1
    • 1 $49.02
    • 10 $37.023
    • 100 $49.02
    • 1000 $49.02
    • 10000 $49.02
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    Verical IXFN38N100P 50 1
    • 1 $49.9267
    • 10 $42.6911
    • 100 $38.02
    • 1000 $37.0533
    • 10000 $37.0533
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    Arrow Electronics IXFN38N100P 50 35 Weeks 1
    • 1 $50.063
    • 10 $42.8077
    • 100 $38.1238
    • 1000 $37.1544
    • 10000 $37.1544
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    Newark IXFN38N100P Bulk 300 1
    • 1 $32.76
    • 10 $32.76
    • 100 $32.76
    • 1000 $32.76
    • 10000 $32.76
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    RS IXFN38N100P Bulk 8 Weeks 10
    • 1 -
    • 10 $53.83
    • 100 $53.83
    • 1000 $53.83
    • 10000 $53.83
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    IXYS Corporation IXFN38N100P

    MOSFET Modules 38 Amps 1000V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN38N100P 251
    • 1 $47.01
    • 10 $37.02
    • 100 $34.8
    • 1000 $34.8
    • 10000 $34.8
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    Future Electronics IXFN38N100P Tube 300
    • 1 -
    • 10 $36.02
    • 100 $35.08
    • 1000 $35.08
    • 10000 $35.08
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    TTI IXFN38N100P Tube 300
    • 1 -
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    • 100 -
    • 1000 $33.95
    • 10000 $33.95
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    TME IXFN38N100P 1
    • 1 $58.17
    • 10 $46.27
    • 100 $46.27
    • 1000 $46.27
    • 10000 $46.27
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    New Advantage Corporation IXFN38N100P 235 1
    • 1 -
    • 10 -
    • 100 $81.5
    • 1000 $76.07
    • 10000 $76.07
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    IXFN38N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN38N100P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 38A SOT-227B Original PDF

    IXFN38N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    38N100P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN38N100P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D PDF

    IXFN38N100p

    Abstract: 38N100P IRM38A IRM-38 Power Diode 1000V irm 38 38n100
    Text: PolarTM Power MOSFET HiPerFETTM IXFN38N100P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D IXFN38N100p IRM38A IRM-38 Power Diode 1000V irm 38 38n100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 38A ≤ 210mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		IXFN38N100P 300ns OT-227 E153432 38N100P 8-23-07-B PDF

    IXFN38N100P

    Abstract: sot 227b diode fast IXFN38N100
    Text: IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFN38N100P 300ns OT-227 E153432 38N100P 4-03-08-C IXFN38N100P sot 227b diode fast IXFN38N100 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P PDF