IXFR32N100P Search Results

IXFR32N100P Price and Stock

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Littelfuse Inc IXFR32N100P MOSFET N-CH 1000V 18A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR32N100P	Tube			300	1 - 10 - 100 - 1000 $15.72663 10000 $15.72663	Buy Now
Newark	IXFR32N100P	Bulk			300	1 - 10 - 100 - 1000 $16.49 10000 $16.49	Buy Now
RS	IXFR32N100P	Bulk		8 Weeks	30	1 - 10 - 100 $24.32 1000 $24.32 10000 $24.32	Get Quote
IXYS Corporation IXFR32N100P MOSFETs 32 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFR32N100P					1 - 10 - 100 - 1000 $17.79 10000 $17.79	Get Quote
Future Electronics	IXFR32N100P	Tube		26 Weeks	30	1 - 10 - 100 $18.43 1000 $18.43 10000 $18.43	Buy Now
TTI	IXFR32N100P	Tube			300	1 - 10 - 100 - 1000 $15.73 10000 $15.73	Buy Now
TME	IXFR32N100P		12		1	1 $27.21 10 $21.57 100 $19.55 1000 $19.55 10000 $19.55	Buy Now

IXFR32N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR32N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 18A ISOPLUS247		Original	PDF

IXFR32N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR32N100P 32N100P 8-24-07-B
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR32N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR32N100P 300ns Dire12 32N100P 3-28-08-C
IXFR32N100P Abstract: 32N100P ISOPLUS247 IXFR32N100 Text: PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR32N100P 300ns 32N100P 3-28-08-C IXFR32N100P ISOPLUS247 IXFR32N100
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P