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IXGK75N250 Price and Stock

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IXYS Corporation IXGK75N250 IGBT NPT 2500V 170A TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK75N250	Tube	738		1	1 $108.52 10 $108.52 100 $91.1468 1000 $91.1468 10000 $91.1468	Buy Now
Mouser Electronics	IXGK75N250		204			1 $104.73 10 $103.81 100 $101.41 1000 $101.41 10000 $101.41	Buy Now
Future Electronics	IXGK75N250	Tube			25	1 - 10 - 100 $90.66 1000 $90.66 10000 $90.66	Buy Now
TTI	IXGK75N250	Tube			300	1 - 10 - 100 - 1000 $121.53 10000 $121.53	Buy Now
TME	IXGK75N250				1	1 $152.86 10 $121.06 100 $108.75 1000 $108.75 10000 $108.75	Get Quote
Littelfuse Inc IXGK75N250 Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current:170A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:780W; Collector Emitter Voltage Max:2.5Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Littelfuse IXGK75N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGK75N250	Bulk	46		1	1 $97.89 10 $92.18 100 $89.32 1000 $89.32 10000 $89.32	Buy Now

IXGK75N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGK75N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W TO264		Original	PDF

IXGK75N250 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
75N250 Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16 Text: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 10-12-09-C IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16	PDF
IXGk 75N250 Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247 Text: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 IXGk 75N250 IXGK75N250 IXGX75N250 Plus PLUS247	PDF
IXGK75N250 Abstract: Plus PLUS247 Text: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGK75N250 IXGX75N250 IC110 75N250 IXGK75N250 Plus PLUS247	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGK75N250 IXGX75N250 O-264 75N250	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF