ixsn35n100au1
Abstract: No abstract text available
Text: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient
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IXSN35N100AU1
OT-227B
1250C,
80A/us
D-68916;
ixsn35n100au1
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ixsn35n100au1
Abstract: No abstract text available
Text: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous
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OCR Scan
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IXSN35N100AU1
-15A/ijs,
80A/us
D-68916;
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