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    IXTA02N250 Search Results

    IXTA02N250 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA02N250 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263 Original PDF
    IXTA02N250HV IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263 Original PDF

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    IXTA02N250

    Abstract: No abstract text available
    Text: IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 O-247 PLUS220SMD O-247) PLUS220 O-263)

    IXTA02N250

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA02N250HV High Voltage Power MOSFET VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V


    Original     		PDF IXTA02N250HV O-263AB 200mA 100ms 100ms 02N250 IXTA02N250

    IXTA02N250

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA02N250 IXTH02N250 IXTV02N250S VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 IXTA02N250 100ms