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    IXTA2N100P Search Results

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    IXTA2N100P Price and Stock

    Littelfuse Inc IXTA2N100P

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P Tube 300
    • 1 -
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    • 1000 $1.7724
    • 10000 $1.7724
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    Arrow Electronics IXTA2N100P 292 20 Weeks 1
    • 1 $1.3023
    • 10 $1.3023
    • 100 $1.3023
    • 1000 $1.3023
    • 10000 $1.3023
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    Newark IXTA2N100P Bulk 300
    • 1 -
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    • 100 $2.39
    • 1000 $1.92
    • 10000 $1.79
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    Littelfuse Inc IXTA2N100P-TRL

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P-TRL Reel 800
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    • 1000 $1.67513
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    Newark IXTA2N100P-TRL Reel 800
    • 1 $2.22
    • 10 $2.22
    • 100 $2.22
    • 1000 $2.22
    • 10000 $1.83
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    IXYS Corporation IXTA2N100P

    MOSFETs 2 Amps 1000V 7.5 Rds
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    Mouser Electronics IXTA2N100P
    • 1 $3.59
    • 10 $3.02
    • 100 $2.41
    • 1000 $2.31
    • 10000 $2.31
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    Future Electronics IXTA2N100P Tube 300
    • 1 -
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    • 100 $1.89
    • 1000 $1.77
    • 10000 $1.72
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    TTI IXTA2N100P Tube 300
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    • 1000 $1.77
    • 10000 $1.77
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    TME IXTA2N100P 1
    • 1 $2.64
    • 10 $2.11
    • 100 $1.96
    • 1000 $1.96
    • 10000 $1.96
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    IXYS Corporation IXTA2N100P-TRL

    MOSFETs IXTA2N100P TRL
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    Mouser Electronics IXTA2N100P-TRL
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    • 1000 $1.81
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    TTI IXTA2N100P-TRL Reel 800
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    • 1000 $1.79
    • 10000 $1.79
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    IXTA2N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA2N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-263 Original PDF

    IXTA2N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P

    IXTP2N100P

    Abstract: 2N100P IXTA2N100P IXTP2N100
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A