Untitled
Abstract: No abstract text available
Text: IXTH17P25 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)17 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)
|
Original
|
PDF
|
IXTH17P25
|
mbab
Abstract: ixth17p25 ixtm17p25
Text: I ÎOE D 1 4bflhS2b GOODatiO 5 | X Y S CORP □ P-CHANNEL MOSFETS IX Y S IXTH17P25 IXTM17P25 ' M A X IM U M R A T IN G S P a ram eter Sym . IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 V Ds s 250 Vdc Drain-Gate Voltage (R q s = 1.0MÎ1) (1) Vdgr 250
|
OCR Scan
|
PDF
|
IXTH17P25
IXTM17P25
IXTH17P25
IXTM17P25
O-247
O-204
00ESN0TINCLUOE
mbab
|
AX 1668 F 24 pin
Abstract: AX 1668 F IXTH17P25 ixtm17p25
Text: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc
|
OCR Scan
|
PDF
|
IXTH17P25
IXTM17P25
IXTM17P25
O-247
O-204
AX 1668 F 24 pin
AX 1668 F
|
IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
|
OCR Scan
|
PDF
|
00V/12A
IRF250
IXTH13P20
IXTP2N95
IXTP2N100A
IXTP2N95A
IXTP4N100
IXTP4N100A
IXTP4N90
IXTP4N90A
IXTP4N95
|
IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
|
OCR Scan
|
PDF
|
|
