IXTH21N60 Search Results

IXTH21N60 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH21N60		IXYS	MegaMOS Power MOSFETs		Scan	PDF

IXTH21N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXTH21N60 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)	Original	IXTH21N60	PDF
21N60 Abstract: a 1712 mosfet s300h 21N55 247 AA Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous	OCR Scan	00D0342 IXTH21N60, IXTM21N60, IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 O-204 O-247 21N60 a 1712 mosfet s300h 21N55 247 AA	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: IXTH21N60 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)

Original

IXTH21N60

PDF

21N60

Abstract: a 1712 mosfet s300h 21N55 247 AA
Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous

OCR Scan

00D0342 IXTH21N60, IXTM21N60, IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 O-204 O-247 21N60 a 1712 mosfet s300h 21N55 247 AA

PDF

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4