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    IXTH4N150 Search Results

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    IXTH4N150 Price and Stock

    Littelfuse Inc IXTH4N150

    MOSFET N-CH 1500V 4A TO247
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    DigiKey IXTH4N150 Tube 300
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    Newark IXTH4N150 Bulk 300
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    IXYS Corporation IXTH4N150

    MOSFETs High Voltage Power MOSFET
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    Mouser Electronics IXTH4N150 300
    • 1 $9.24
    • 10 $7.45
    • 100 $5.68
    • 1000 $4.97
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    Future Electronics IXTH4N150 Tube 30
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    TTI IXTH4N150 Tube 300
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    TME IXTH4N150 1
    • 1 $8.3
    • 10 $6.6
    • 100 $5.93
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    New Advantage Corporation IXTH4N150 291 1
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    IXTH4N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH4N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 4A TO-247 Original PDF

    IXTH4N150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTH4N150

    Abstract: 4N150
    Text: Advance Technical Information IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Abstract: 4n150
    Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Abstract: No abstract text available
    Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 9-12-12-C IXTH4N150 PDF

    IXTH4N150

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF