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    IXTM4N60 Search Results

    IXTM4N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM4N60 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N60 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N60 Sharp 600 V, 6 A, sourse-drain diode Scan PDF
    IXTM4N60A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N60A IXYS High Voltage Power MOSFETs Scan PDF

    IXTM4N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N60R

    Abstract: 4n60 4n60a IXTM4N60 IXTP4N60
    Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		PDF IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 O-220 300jjs, 4N60R 4n60 4n60a

    mosfet 4n60

    Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60
    Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)


    OCR Scan     		PDF IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 specifi420 O-204 O-220 O-247 mosfet 4n60 4n60a 4N60R 4n60

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


    OCR Scan     		PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A