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    IXTM7N50 Search Results

    IXTM7N50 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM7N50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM7N50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM7N50 Unknown FET Data Book Scan PDF
    IXTM7N50 Sharp 500 V, 7 A, sourse-drain diode Scan PDF
    IXTM7N50A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM7N50A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM7N50A Unknown FET Data Book Scan PDF

    IXTM7N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: ixtm7n45 IXTM7N50
    Text: I X Y S CORP lflE I> • 4bflbS2b G O O Q b l 4 0 ■ IXTP7N45, IXTP7N50, IXTM7N45, IXTM7N50 □ IX Y S 7 A M P S , 4 5 0 -5 0 0 V, 0.85Ö/1.10S2 MAXIMUM R A T IN G S 'T '- Z a Parameter Sym . Drain-Source Voltage 1 Drain-Gate Voltage (RGS =1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan     		PDF 1XTP7N45, IXTP7N50, IXTM7N45, IXTM7N50 IXTP7N45 IXTM7N45 IXTP7N50 CHARACTE420 O-204 P-CHANNEL 45A TO-247 POWER MOSFET ixtm7n45

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


    OCR Scan     		PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


    OCR Scan     		PDF M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204

    IXTP7N50

    Abstract: 7n50r 7N45 7N50 IXTM7N45 IXTM7N50 IXTP7N45
    Text: I X Y S CORP □ I X Y lflE I> • IX T P 7 N 4 5 , S 4bflbS2b OOOQbl4 0 ■ IX T P 7 N 5 0 , IX T M 7 N 4 5 , IX T M 7 N 5 0 7 A M P S , 4 5 0 -5 0 0 V, 0.85Q/1.10S2 M AXIM UM RATINGS 'T '- Z a Parameter Sym. Drain-Source Voltage 1 IXTP7N45 IXTM7N45 IXTP7N50


    OCR Scan     		PDF 4bfltj22fcj IXTP7N45, IXTP7N50, IXTM7N45, IXTM7N50 85Q/1 IXTP7N45 IXTM7N45 IXTP7N50 IXTM7N50 IXTP7N50 7n50r 7N45 7N50 IXTM7N45