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    IXTN600N04T2 Search Results

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    IXTN600N04T2 Price and Stock

    Littelfuse Inc IXTN600N04T2

    MOSFET N-CH 40V 600A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN600N04T2 Tube 401 1
    • 1 $35.49
    • 10 $26.297
    • 100 $35.49
    • 1000 $35.49
    • 10000 $35.49
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    Newark IXTN600N04T2 Bulk 300
    • 1 -
    • 10 -
    • 100 $22.85
    • 1000 $22.85
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    IXYS Corporation IXTN600N04T2

    MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTN600N04T2 1,074
    • 1 $31.87
    • 10 $24.33
    • 100 $23.32
    • 1000 $23.32
    • 10000 $23.32
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    Future Electronics IXTN600N04T2 Tube 300
    • 1 -
    • 10 $23.52
    • 100 $23.04
    • 1000 $22.86
    • 10000 $22.86
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    TTI IXTN600N04T2 Tube 300
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    • 100 -
    • 1000 $23.32
    • 10000 $23.32
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    TME IXTN600N04T2 1
    • 1 $39.49
    • 10 $31.38
    • 100 $31.38
    • 1000 $31.38
    • 10000 $31.38
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    ComSIT USA IXTN600N04T2 1,117
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    New Advantage Corporation IXTN600N04T2 10 1
    • 1 -
    • 10 $53.66
    • 100 $53.66
    • 1000 $53.66
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    IXTN600N04T2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN600N04T2 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 40V 600A SOT-227 Original PDF

    IXTN600N04T2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTN600N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


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    IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2 PDF

    IXTN600N04T2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS


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    IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2 PDF

    IXTN 600N04T2

    Abstract: IXTN600N04T2 123B16
    Text: Preliminary Technical Information IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


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    IXTN600N04T2 OT-227 E153432 600N04T2 IXTN 600N04T2 IXTN600N04T2 123B16 PDF

    IXTN 600N04T2

    Abstract: IXTN600N04T2 600N04T2
    Text: IXTN600N04T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = 40V 600A Ω 1.3mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR


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    IXTN600N04T2 OT-227 E153432 So00A 600N04T2 IXTN 600N04T2 IXTN600N04T2 600N04T2 PDF

    Full-Bridge topology switching power supply

    Abstract: hybrid car charger inverter sot-227 footprint dc link capacitor EV Battery IXFN520N075T2 ups circuit power mosfet for ev battery charger dc to dc full-bridge mosfet for dc to ac inverter
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM TrenchT2TM Power MOSFETs Power MOSFET Solutions for low voltage, high current power conversion systems january 2010 OVERVIEW IXYS announces the portfolio expansion of its GigaMOSTM product family with new


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