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    IXTP14N60PM Search Results

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    IXTP14N60PM Price and Stock

    Littelfuse Inc IXTP14N60PM

    MOSFET N-CH 600V 7A TO220
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    DigiKey IXTP14N60PM Tube 300
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    Newark IXTP14N60PM Bulk 300
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    • 100 $2.84
    • 1000 $2.28
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    IXYS Corporation IXTP14N60PM

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    Future Electronics IXTP14N60PM Tube 24 Weeks 50
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    • 100 $2.33
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    TTI IXTP14N60PM Tube 300
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    • 1000 $2.74
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    TME IXTP14N60PM 1
    • 1 $3.56
    • 10 $2.81
    • 100 $2.55
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    New Advantage Corporation IXTP14N60PM 76 1
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    • 100 $4.77
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    IXYS Integrated Circuits Division IXTP14N60PM

    MOSFET DIS.14A 600V N-CH TO220AB POLARHV THT
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    Ozdisan Elektronik IXTP14N60PM 95
    • 1 $3.93932
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    • 100 $3.5812
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    IXTP14N60PM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP14N60PM IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7A TO-220 Original PDF

    IXTP14N60PM Datasheets Context Search

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    14n60

    Abstract: IXTP14N60PM
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTP14N60PM RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXTP14N60PM 14N60P 12-22-08-G 14n60 IXTP14N60PM

    IXTP14N60PM

    Abstract: 14n60 7A 27
    Text: IXTP14N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXTP14N60PM 14N60P 12-22-08-G IXTP14N60PM 14n60 7A 27

    IXTP14N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250