Untitled
Abstract: No abstract text available
Text: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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Isolator4N38
4N38A
4N38A
0110b
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E 4302271 D 0027142 L> I HAS Optoelectronic Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 FEATURES: 2 6 ! s 1 - s y y u • Fast switching speeds , • High DC current transfer ratio • High isolation resistance
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Isolator4N38
4N38A
E51868
92CS-42662
92CS-429S1
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4N38
Abstract: 4N38A 4N38 A
Text: G E SOLID STATE 01 Optoelectronic Specifications D E § 3a ? s o a i o o n t a o Photon Coupled Isolator4N38,4N38A The G E Solid State 4N38 and 4N38A consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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OCR Scan
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PDF
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T-4/-83
Isolator4N38
4N38A
E51868
0110b
4N38A_
4N38
4N38A
4N38 A
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