TLV2211
Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A – JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157A
JUNE1996
TLV2221
TLV2211
TLV2221CDBV
TLV2221IDBV
TLV2221Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
TLV2211
Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A – JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157A
JUNE1996
TLV2221
TLV2211
TLV2221CDBV
TLV2221IDBV
TLV2221Y
|
PDF
|
TLV2221IDBV
Abstract: transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221Y TLV2231
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2221IDBV
transistor 1012 2/88
TLV2211
TLV2221CDBV
TLV2221Y
TLV2231
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
TLV5592
Abstract: TLV5592ED
Text: TLV5592 2-BIT ANALOG-TO-DIGITAL CONVERTER FOR FLEXt PAGER CHIPSET SLAS145A – JUNE1996 – REVISED DECEMBER 1997 D D D D D Supports FLEXt Protocol Messaging Systems With The TLV559X FLEX Decoder 3-Pole Butterworth Low-Pass Selectable Dual-Bandwidth Audio Filter
|
Original
|
TLV5592
SLAS145A
JUNE1996
TLV559X
TLV5592
TLV5592ED
|
PDF
|
amplifiers discontinued in 1996
Abstract: transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y Accelerometers
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A – JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157A
JUNE1996
TLV2221
amplifiers discontinued in 1996
transistor 1012 2/88
TLV2211
TLV2221CDBV
TLV2221IDBV
TLV2221Y
Accelerometers
|
PDF
|
TLV2221IDBV
Abstract: 10(6) 250 50e3 transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221Y
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157 – JUNE1996 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ
|
Original
|
TLV2221,
TLV2221Y
SLOS157
JUNE1996
TLV2221
TLV2221IDBV
10(6) 250 50e3
transistor 1012 2/88
TLV2211
TLV2221CDBV
TLV2221Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
MB811
Abstract: No abstract text available
Text: June1996 Revision 1.0 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
|
Original
|
June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A – JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157A
JUNE1996
TLV2221
SLOA039A
SLOU060,
SLOU061,
SLVU006A,
SLOU055,
|
PDF
|
NDC632P
Abstract: No abstract text available
Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using
|
Original
|
June1996
NDC632P
NDC632P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
|
|
TLV2211
Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2211
TLV2221CDBV
TLV2221IDBV
TLV2221Y
TLV2231
|
PDF
|
CBVK741B019
Abstract: F63TNR FDC633N NDC632P RCA 014
Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using
|
Original
|
June1996
NDC632P
CBVK741B019
F63TNR
FDC633N
NDC632P
RCA 014
|
PDF
|
TLV2211
Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2211
TLV2221CDBV
TLV2221IDBV
TLV2221Y
TLV2231
|
PDF
|
NDC632P
Abstract: No abstract text available
Text: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is
|
Original
|
June1996
NDC632P
NDC632P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B − JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
|
Original
|
TLV2221,
TLV2221Y
SLOS157B
JUNE1996
TLV2221
OT-23
TLV2231
|
PDF
|
OP123
Abstract: OP900 OP900SL photodiode PN
Text: OPTEK Product Bulletin OP900SL June1996 PN Junction Silicon Photodiode Type OP900SL Features • • • • • Narrow receiving angle Enhanced temperature range Ideal for direct mounting in PC boards Fast switching speed Mechanically and spectrally matched
|
OCR Scan
|
OP900SL
OP123
OP900
photodiode PN
|
PDF
|
piezoelectric sensors by texas instrument
Abstract: t54 sot-23 TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157 - JUNE1996 • Output Swing Includes Both Supply Rails • • • Low Noise . . . 19 nV/VHz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ DBV PACKAGE
|
OCR Scan
|
TLV2221,
TLV2221Y
SLOS157
JUNE1996
TLV2221
TLV2221Y
SLOS157-JUNE
4073253-3/A
fl1bl724
piezoelectric sensors by texas instrument
t54 sot-23
TLV2221CDBV
TLV2221IDBV
|
PDF
|
HI1106
Abstract: No abstract text available
Text: 2 m a r !? H I 1 1 0 6 , C X A 1 1 0 6 8-Bit 35 MSPS June1996 High-Speed D/A Converter TTL Input) Features Description • R eso lu tio n . 8-Bit The HI1106, C X A 1 106 is an 8-bit 35 M S P S high-speed D/A
|
OCR Scan
|
e1996
HI1106,
1-800-4-H
00bb77T
HI1106
|
PDF
|
P6030L
Abstract: 52A zener
Text: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
|
OCR Scan
|
June1996
NDP6030L
NDB6030L
P6030L
52A zener
|
PDF
|
Untitled
Abstract: No abstract text available
Text: June1996 Revision 1.0 FUJITSU DATA S H E E T FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
|
OCR Scan
|
June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
|
PDF
|
