PQ208
Abstract: XC4000E XC4000EX XC4000XL XC9500
Text: Migrating Cadence Designs to M1.3 June1997 Version M1.3 Updated excerpt from Xilinx Software Conversion Guide from XACTstep v5.X to XACTstep vM1.X. June 1997 vM1.3 Application Note excerpt Summary This guide will help you convert your existing Cadence Concept designs from previous versions of XACTstep 5.X to
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June1997
XC4000E/L,
XC4000EX,
XC4000XL,
XC9500
X7747
PQ208
XC4000E
XC4000EX
XC4000XL
XC9500
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Oscillator XR2209
Abstract: 2209cp xr2209cp XR-2209CP SQUARE WAVE TO triangle wave schematic diagram EXAR XR2209 2209 XR2209 XR-2209 XR-2209CN
Text: XR-2209 .the analog plus Voltage-Controlled Oscillator company TM June 1997–3 FEATURES APPLICATIONS D Excellent Temperature Stability 20ppm/°C D Voltage and Current-to-Frequency Conversion D Linear Frequency Sweep D Stable Phase-Locked Loop D Wide Sweep Range (1000:1 Minimum)
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XR-2209
20ppm/
XR-2209
June1997
Oscillator XR2209
2209cp
xr2209cp
XR-2209CP
SQUARE WAVE TO triangle wave schematic diagram
EXAR XR2209
2209
XR2209
XR-2209CN
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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intel g41 motherboard circuit block diagram downs
Abstract: AC flight deck socket box intel g41 circuit pcb diagram schematic diagram of TV memory writer 242692 82450 intel g45 MOTHERBOARD pcb CIRCUIT diagram schematic intel g41 intel g45 circuit diagram 82453GX
Text: E n n n n n n PENTIUM PRO PROCESSOR AT 150 MHz, 166 MHz, 180 MHz and 200 MHz Available at 150 MHz, 166 MHz, 180 MHz and 200MHz core speeds n Binary compatible with applications running on previous members of the Intel microprocessor family n Optimized for 32-bit applications
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200MHz
32-bit
intel g41 motherboard circuit block diagram downs
AC flight deck socket box
intel g41 circuit pcb diagram
schematic diagram of TV memory writer
242692
82450
intel g45 MOTHERBOARD pcb CIRCUIT diagram
schematic intel g41
intel g45 circuit diagram
82453GX
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fss130
Abstract: No abstract text available
Text: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects
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e1997
FSS130D,
FSS130R
O-257AA
36MeV/mg/cm2
1-800-4-HARRIS
fss130
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r6k diode
Abstract: FDC6303N
Text: June1997 F/MRCHII-D ADVANCE INFORMATION Ml CONDUCTOR t o FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very
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June1997
FDC6303N
r6k diode
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Untitled
Abstract: No abstract text available
Text: F A I R C H June1997 I L D SEM ICONDUCTO R PRELIMINARY tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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June1997
FDV303N
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D2259
Abstract: No abstract text available
Text: ISSI 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JUNE1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP12836 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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5ns-166
8ns-150
4ns-133
5ns-100
100-Pin
119-pin
IS61SP12836
TDD4404
PK017-1A
T004404
D2259
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Untitled
Abstract: No abstract text available
Text: FSL110D, FSL110R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june1997 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O S F E T s specifically designed for commercial and military space
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FSL110D,
FSL110R
june1997
1-800-4-HARRIS
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S8936
Abstract: DS8936
Text: FA IR C H ILD SEM ICONDUCTO R June1997 tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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e1997
NDS8936
S8936
DS8936
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM616V1002B/BL,
KM616V1002BI/BLI
64Kx16
June-1997
44-SOJ-400
44-TSOP2-400F
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Untitled
Abstract: No abstract text available
Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS0S7C - APRIL 1998 - REVISED JUNE 199? Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to
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SMJ55166
16-BIT
SGMS057C
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Untitled
Abstract: No abstract text available
Text: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM616V1002A/AL,
KM616V1002AI/ALI
64Kx16
12/15/17/20ns
200/190/180/170mA
170/165/165/160mA
June-1997
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM681001B/BL, KM681001BI/BLI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev .N o. History Draft Data Remark Rev. 0.0 Initial release with Design Target.
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KM681001B/BL,
KM681001BI/BLI
128Kx8
June-1997
32-SOJ-300
32-SOJ-400
June-1997
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