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    K4R271669A Search Results

    K4R271669A Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4R271669A Samsung Electronics 256K x 16/18 bit x 2 x 16 Dependent Banks Direct RDRAM Original PDF
    K4R271669A-MCG6 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669AM-CG6 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Original PDF
    K4R271669A-MCK7 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669AM-CK7 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Original PDF
    K4R271669A-MCK8 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669AM-CK8 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Original PDF
    K4R271669A-Nb(M)CcG6 Samsung Electronics 256K x 16/18 bit x 2 x 16 Dependent Banks Direct RDRAM Original PDF
    K4R271669A-NCG6 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669AN-CG6 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Original PDF
    K4R271669A-NCK7 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669AN-CK7 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Original PDF
    K4R271669AN-CK8 Samsung Electronics 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Original PDF
    K4R271669A-N(M) Samsung Electronics Direct RDRAM Data Sheet Original PDF
    K4R271669A-N(M)CK7 Samsung Electronics 256K x 16/18 bit x 2 x 16 Dependent Banks Direct RDRAM Original PDF
    K4R271669A-N(M)CK8 Samsung Electronics 256K x 16/18 bit x 2 x 16 Dependent Banks Direct RDRAM Original PDF
    K4R271669A-SCK8 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Extended Commercial: uBGA: 54-Pin Original PDF
    K4R271669A-VCG6 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669A-VCK7 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF
    K4R271669A-VCK8 Samsung Electronics DRAM Chip: RDRAM: 16MByte: 2.5V Supply: Commercial: uBGA: 62-Pin Original PDF

    K4R271669A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History


    Original     		PDF K4R271669A 128Mbit

    T29 marking

    Abstract: e61 marking code T45 to DB9 DB26 Outline T39
    Text: Direct RDRAM K4R271669A/K4R441869A 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 Direct RDRAM™ K4R271669A/K4R441869A Revision History Version 1.0 July 1999 - Preliminary


    Original     		PDF K4R271669A/K4R441869A 128/144Mbit 356er-Bonded T29 marking e61 marking code T45 to DB9 DB26 Outline T39

    K4R271669A

    Abstract: No abstract text available
    Text: Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM A-die 256K x 16 bit x 32s Banks Direct RDRAMTM Short Channel Version 1.11 October 2000 Page -2 Version 1.11 Oct. 2000 Direct RDRAM™ K4R271669A for Short Channel Change History Version 0.9 (July 1999) - Target


    Original     		PDF K4R271669A 128Mbit

    e61 marking code

    Abstract: No abstract text available
    Text: Direct RDRAM K4R271669A/K4R441869A 128/144Mbit RDRAM A-die 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 Direct RDRAM™ K4R271669A/K4R441869A Change History Version 1.0 ( July 1999 ) - Preliminary


    Original     		PDF K4R271669A/K4R441869A 128/144Mbit 356MHz 300MHz Figure31 Figure32 128Mb/144Mb) e61 marking code

    Untitled

    Abstract: No abstract text available
    Text: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.


    Original     		PDF MR16R0824 MR16R082C 8Mx16 K4R271669A-NCK8/NCK7/NCG6)

    Untitled

    Abstract: No abstract text available
    Text: MR16R0824 8 AM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 128M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.


    Original     		PDF MR16R0824 8Mx16 K4R271669A-MCK8/MCK7/MCG6) 16K/32ms

    Untitled

    Abstract: No abstract text available
    Text: MR16R0824 8 AS0 RAMBUS MODULE SERIAL PRESENCE DETECT Consumer RIMM SPD Specification based on 128M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.


    Original     		PDF MR16R0824 8Mx16 K4R271669A-SCG6* 16K/32ms 600MHz

    Untitled

    Abstract: No abstract text available
    Text: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 128M RDRAM(2nd Gen.) based RIMM REV. 1.02 December 1999 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)


    Original     		PDF MR16R0824 300MHz 266MHz