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    K4S280832M Search Results

    K4S280832M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280832M Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S280832M-TC/L10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). Original PDF
    K4S280832M-TC/L1H Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). Original PDF
    K4S280832M-TC/L1L Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). Original PDF
    K4S280832M-TC/L80 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). Original PDF

    K4S280832M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S280832M

    Abstract: No abstract text available
    Text: K4S280832M CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM


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    PDF K4S280832M 128Mbit K4S280832M A10/AP

    K4S281632M-TL10

    Abstract: M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924MT0-L10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632M-TL10


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    PDF 144pin) 128Mb M466S0924MT0-L10 8Mx64 8Mx16 K4S281632M-TL10 000mil 4K/64ms 128bytes 256bytes K4S281632M-TL10 M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m

    M466S1723MT3-L10

    Abstract: No abstract text available
    Text: M466S1723MT3 PC66 SODIMM M466S1723MT3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723MT3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M466S1723MT3 M466S1723MT3 16Mx64 16Mx8, 400mil 144-pin M466S1723MT3-L10

    CDC2509

    Abstract: M377S1723MT3-C1H M377S1723MT3-C1L
    Text: PC100 Registered DIMM M377S1723MT3 M377S1723MT3 SDRAM DIMM Intel 1.2 ver Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S1723MT3 is a 16M bit x 72 Synchronous


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    PDF PC100 M377S1723MT3 M377S1723MT3 16Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S1723MT3-C1H M377S1723MT3-C1L

    M374S3323MT0-C1H

    Abstract: M374S3323MT0-C1L M374S3323MT0-C80
    Text: M374S3323MT0 PC100 Unbuffered DIMM M374S3323MT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3323MT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M374S3323MT0 PC100 M374S3323MT0 32Mx72 16Mx8, 400mil 168-pin M374S3323MT0-C1H M374S3323MT0-C1L M374S3323MT0-C80

    M374S1723MTS-C1L

    Abstract: M374S1723MTS-C80
    Text: M374S1723MTS PC100 Unbuffered DIMM M374S1723MTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723MTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M374S1723MTS PC100 M374S1723MTS 16Mx72 16Mx8, 400mil 168-pin M374S1723MTS-C1L M374S1723MTS-C80

    K4S281632M-TC80

    Abstract: samsung dimm 128mb pc100 32mx64
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0924MT0-C80/C1H/C1L • Organization : 8Mx64 • Composition : 8Mx16 *4


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    PDF PC100 168pin) 128Mb M366S0924MT0-C80/C1H/C1L 8Mx64 8Mx16 K4S281632M-TC80/C1H/C1L 375mil K4S281632M-TC80 samsung dimm 128mb pc100 32mx64

    M466S1723MT2-L10

    Abstract: No abstract text available
    Text: M466S1723MT2 PC66 SODIMM M466S1723MT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723MT2 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M466S1723MT2 M466S1723MT2 16Mx64 16Mx8, 400mil 144-pin M466S1723MT2-L10

    CDC2509

    Abstract: M377S3323MT0-C1H M377S3323MT0-C1L
    Text: M377S3323MT0 PC100 Registered DIMM M377S3323MT0 SDRAM DIMM Intel 1.2 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323MT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S3323MT0 consists of eighteen CMOS 16Mx8 bit


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    PDF M377S3323MT0 PC100 M377S3323MT0 32Mx72 16Mx8, 16Mx8 400mil 18bits CDC2509 M377S3323MT0-C1H M377S3323MT0-C1L

    M366S3323MT0-C1L

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM M366S3323MT0 M366S3323MT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323MT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original
    PDF PC100 M366S3323MT0 M366S3323MT0 32Mx64 16Mx8, 400mil 168-pin M366S3323MT0-C1L

    M366S1723MTS-C1H

    Abstract: M366S1723MTS-C1L M366S1723MTS-C80 K4S280832
    Text: PC100 Unbuffered DIMM M366S1723MTS M366S1723MTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723MTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF PC100 M366S1723MTS M366S1723MTS 16Mx64 16Mx8, 400mil 168-pin M366S1723MTS-C1H M366S1723MTS-C1L M366S1723MTS-C80 K4S280832