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    K4S281632M Search Results

    K4S281632M Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S281632M Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-L10 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-L1H Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-L1L Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-L80 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-TC Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-TC10 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 66MHz Original PDF
    K4S281632M-TC1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632M-TC1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632M-TC80 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 125MHz Original PDF
    K4S281632M-TC/L10 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) Original PDF
    K4S281632M-TC/L1H Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) Original PDF
    K4S281632M-TC/L1L Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) Original PDF
    K4S281632M-TC/L80 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) Original PDF
    K4S281632M-TL Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S281632M-TL10 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 66MHz Original PDF
    K4S281632M-TL1H Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632M-TL1L Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 100MHz Original PDF
    K4S281632M-TL80 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 125MHz Original PDF

    K4S281632M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4S281632M-TL10

    Abstract: M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924MT0-L10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632M-TL10


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    144pin) 128Mb M466S0924MT0-L10 8Mx64 8Mx16 K4S281632M-TL10 000mil 4K/64ms 128bytes 256bytes K4S281632M-TL10 M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m PDF

    16MX64

    Abstract: 8MX16
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.1 February 2000 Rev 0.1 Feb. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S0924MT1-L1H/L1L • Organization : 8MX64 • Composition : 8MX16 *4 • Used component part # : K4S281632M-TL1H/L1L


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    PC100 144pin) 128Mb M464S0924MT1-L1H/L1L 8MX64 8MX16 K4S281632M-TL1H/L1L 4K/64ms 16MX64 8MX16 PDF

    K4S281632M

    Abstract: No abstract text available
    Text: K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632M CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


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    K4S281632M 128Mbit 16Bit K4S281632M A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: M464S1724MT1 PC100 SODIMM M464S1724MT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1724MT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M464S1724MT1 PC100 M464S1724MT1 16Mx64 8Mx16 400mil 144-pin PDF

    M464S0924MT1-L1H

    Abstract: No abstract text available
    Text: M464S0924MT1 PC100 SODIMM M464S0924MT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924MT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M464S0924MT1 PC100 M464S0924MT1 8Mx64 8Mx16, 400mil 144-pin M464S0924MT1-L1H PDF

    Untitled

    Abstract: No abstract text available
    Text: M466S1724MT2 PC66 SODIMM M466S1724MT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1724MT2 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M466S1724MT2 M466S1724MT2 16Mx64 8Mx16, 400mil 144-pin PDF

    M466S0924MT0-L10

    Abstract: No abstract text available
    Text: M466S0924MT0 PC66 SODIMM M466S0924MT0 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0924MT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M466S0924MT0 M466S0924MT0 8Mx64 8Mx16, 400mil 144-pin 144-pin M466S0924MT0-L10 PDF

    M366S0924MTS-C1H

    Abstract: M366S0924MTS-C1L M366S0924MTS-C80
    Text: PC100 Unbuffered DIMM M366S0924MTS M366S0924MTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0924MTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PC100 M366S0924MTS M366S0924MTS 8Mx64 8Mx16, 400mil 168-pin M366S0924MTS-C1H M366S0924MTS-C1L M366S0924MTS-C80 PDF

    K4S281632M-TC80

    Abstract: samsung dimm 128mb pc100 32mx64
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0924MT0-C80/C1H/C1L • Organization : 8Mx64 • Composition : 8Mx16 *4


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    PC100 168pin) 128Mb M366S0924MT0-C80/C1H/C1L 8Mx64 8Mx16 K4S281632M-TC80/C1H/C1L 375mil K4S281632M-TC80 samsung dimm 128mb pc100 32mx64 PDF

    M366S1724MT0-C1H

    Abstract: M366S1724MT0-C1L M366S1724MT0-C80
    Text: M366S1724MT0 PC100 Unbuffered DIMM M366S1724MT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1724MT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    M366S1724MT0 PC100 M366S1724MT0 16Mx64 8Mx16, 400mil 168-pin M366S1724MT0-C1H M366S1724MT0-C1L M366S1724MT0-C80 PDF