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    K6X4016C3F Price and Stock

    Samsung Semiconductor K6X4016C3F-UF55000

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    Samsung Semiconductor K6X4016C3F-UF55T00

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    Samsung Semiconductor K6X4016C3F-UF55

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    Samsung Semiconductor K6X4016C3F-TF55

    256K X 16 STANDARD SRAM, 55 ns, PDSO44
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    Quest Components K6X4016C3F-TF55 4
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    Samsung Semiconductor K6X4016C3F-TB55

    STANDARD SRAM, 256KX16, 55NS, CMOS, PDSO44
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    Quest Components K6X4016C3F-TB55 1
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    K6X4016C3F Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6X4016C3F Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-B Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-F Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-Q Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TB55 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TB70 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TF55 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TF70 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TQ55 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF
    K6X4016C3F-TQ70 Samsung Electronics 256K x 16 bit Low Power full CMOS Static RAM Original PDF

    K6X4016C3F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6X4016C3F

    Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
    Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.


    Original     		PDF K6X4016C3F 256Kx16 44-TSOP2-400R K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q

    ua 0741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft July 26, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6X4016C3F 256Kx16 256Kx16 ua 0741

    K6X4016C3F-UF55

    Abstract: K6X4016C3FUF55 K6X4016C3F-UB55 K6X4016C3F-UF70 K6X4016C3F-UF K6X4016C3F-UF551
    Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.


    Original     		PDF K6X4016C3F 256Kx16 44-TSOP2-400R K6X4016C3F-UF55 K6X4016C3FUF55 K6X4016C3F-UB55 K6X4016C3F-UF70 K6X4016C3F-UF K6X4016C3F-UF551

    K6X4016C3F-TF70

    Abstract: K6X4016C3F-TB55 K6X4016C3F K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q k6x4016c3f-tf55
    Text: Preliminary CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.


    Original     		PDF K6X4016C3F 256Kx16 44-TSOP2-400R K6X4016C3F-TF70 K6X4016C3F-TB55 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q k6x4016c3f-tf55

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN