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    Samsung Semiconductor K7A161830B-QC16

    STANDARD SRAM, 1MX18, 3.5NS, CMOS, PQFP100
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    K7A161830B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K7A161830B-PI16 Samsung Electronics 18mb B-die Sync Sram Specification 100tqfp With Pb Pb-free Original PDF
    K7A161830B-PI25 Samsung Electronics 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB PB-FREE Original PDF
    K7A161830B-Q(P)C(1)25-16 Samsung Electronics 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB,PB-FREE Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: K7A163630B K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K7A163630B K7A161830B 512Kx36 1Mx18 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: K7A163630B K7A161830B Preliminary 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Mar. 22. 2004 Advance 0.1 1. Update the DC current spec ICC, ISB


    Original     		PDF K7A163630B K7A161830B 512Kx36 1Mx18 1Mx18-Bit 120mA 170mA 150mA 130mA

    K7A163630B

    Abstract: K7A161830B
    Text: K7A163630B K7A161830B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7A163630B K7A161830B 512Kx36 1Mx18 100TQFP 100-TQFP-1420A K7A163630B K7A161830B

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K7B163635B

    Abstract: K7B161835B
    Text: K7B163635B K7B161835B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7B163635B K7B161835B 512Kx36 1Mx18 100TQFP 100-TQFP-1420A K7B163635B K7B161835B

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K7B163635B-QC

    Abstract: No abstract text available
    Text: K7B163635B K7B161835B Preliminary 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft Mar. 23. 2004 Advance 0.1 1. Update the DC current spec ICC, ISB


    Original     		PDF K7B163635B K7B161835B 512Kx36 1Mx18 1Mx18-Bit 120mA 170mA 150mA 130mA K7B163635B-QC

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    Untitled

    Abstract: No abstract text available
    Text: K7A163631B K7A161831B 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7A163631B K7A161831B 512Kx36 1Mx18 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: K7A163631B K7A161831B Preliminary 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Mar. 23. 2004 Advance 0.1 1. Update the DC current spec ICC, ISB


    Original     		PDF K7A163631B K7A161831B 512Kx36 1Mx18 1Mx18-Bit 120mA 170mA 150mA 130mA

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe