mosfet vdss500v, vgss 30v
Abstract: KF10N50F KF10N50P MARKING FZ vdss500v, vgss 30v, id 25 A, KF10N50 813F2 FZ 101
Text: SEMICONDUCTOR KF10N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50P,KF10N50PZ This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KF10N50P/F/PZ/FZ
KF10N50P
KF10N50PZ
Fig15.
Fig16.
Fig17.
mosfet vdss500v, vgss 30v
KF10N50F
MARKING FZ
vdss500v, vgss 30v, id 25 A,
KF10N50
813F2
FZ 101
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mosfet vdss500v, vgss 30v
Abstract: KF10N50
Text: SEMICONDUCTOR KF10N50PR/FR TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50PR This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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Original
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PDF
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170ns
KF10N50PR/FR
KF10N50PR
Fig15.
Fig16.
Fig17.
mosfet vdss500v, vgss 30v
KF10N50
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