Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KHB019N20P1 Search Results

    SF Impression Pixel

    KHB019N20P1 Price and Stock

    KEC KHB019N20P1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KHB019N20P1UP 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    KHB019N20P1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB019N20P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB019N20P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB019N20P1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KHB019N20F1

    Abstract: KHB019N20F2 KHB019N20P1
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1 PDF

    KHB019N20P1

    Abstract: KHB019N20F1
    Text: KHB019N20P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1 KHB019N20P1 KHB019N20P1 KHB019N20F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1 PDF

    019N20P

    Abstract: 019n20 KHB019N20P1 019n KHB019N20P
    Text: SEMICONDUCTOR KHB019N20P1 MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 1 2 No. Item 501 3 Marking Description KHB KHB 019N20P 019N20P Revision 1 1 Lot No. 501 Device Name 2006. 2. 6 019N20P Revision No : 0 5 Year


    Original
    KHB019N20P1 O-220AB 019N20P 019N20P 019n20 KHB019N20P1 019n KHB019N20P PDF

    KHB019N20F2

    Abstract: KHB019N20F1 KHB019N20P
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F2 KHB019N20F1 KHB019N20P PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1/F2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1 KHB019N20P1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original
    KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


    Original
    OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF