4D5N60F
Abstract: KHB 4D5N60F KHB4D5N60F 4d5n60 KHB4D5N60F2
Text: SEMICONDUCTOR KHB4D5N60F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 4D5N60F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB4D5N60F2 KHB4D5N60F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009
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KHB4D5N60F2
O-220IS
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4D5N60F
KHB 4D5N60F
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4d5n60
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KHB4D5N60F2
Abstract: KHB4D5N60F KHB4D5N60P
Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB4D5N60P/F/F2
KHB4D5N60P
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KHB4D5N60F
Abstract: KHB4D5N60F2
Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB4D5N60P/F/F2
KHB4D5N60P
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Fig16.
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KHB4D5N60F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode
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KHB4D5N60P/F/F2
KHB4D5N60P
Fig15.
Fig16.
Fig17.
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