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    KHB9D5N20F2 Search Results

    KHB9D5N20F2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB9D5N20F2 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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    9d5n20f

    Abstract: khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking
    Text: SEMICONDUCTOR KHB9D5N20F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D5N20F2 KHB9D5N20F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


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    PDF KHB9D5N20F2 O-220IS 9D5N20F 9d5n20f khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking

    khb*9D5N20P

    Abstract: KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE
    Text: SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D5N20P1/F1/F2 KHB9D5N20P1 Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    khb9D5N20P

    Abstract: semiconductor KHB9d5n20f KHB9D5N20F khb*9D5N20P
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D5N20P/F/F2 KHB9D5N20P KHB9D5N20F KHB9D5N20F KHB9D5N20F2 khb9D5N20P semiconductor KHB9d5n20f khb*9D5N20P

    khb*9D5N20P

    Abstract: KHB9D5N20F khb9D5N20P KHB9D5N20F2
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20F khb9D5N20P KHB9D5N20F2

    KHB9D5N20F

    Abstract: khb*9D5N20P
    Text: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. KHB9D5N20F khb*9D5N20P