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    KM416V254DJ Search Results

    KM416V254DJ Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V254DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Original PDF
    KM416V254DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V254DJL-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Original PDF
    KM416V254DJL-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Original PDF

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    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416V254DJ 256Kx16 DQ0-DQ15 rbbb PDF

    C254D

    Abstract: cmos dram NCC KMQ
    Text: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		V254DJ 256Kx16 OT7T2733T KM416V254DJ 003242b C254D cmos dram NCC KMQ PDF